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Other articles related with "NO annealing"：
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97101 |
Yifan Jia(贾一凡), Hongliang Lv(吕红亮), Yingxi Niu(钮应喜), Ling Li(李玲), Qingwen Song(宋庆文), Xiaoyan Tang(汤晓燕), Chengzhan Li(李诚瞻), Yanli Zhao(赵艳黎), Li Xiao(肖莉), Liangyong Wang(王梁永), Guangming Tang(唐光明), Yimen Zhang(张义门), Yuming Zhang(张玉明) |
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Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices |
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Chin. Phys. B
2016 Vol.25 (9): 97101-097101
[Abstract]
(626)
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[PDF 775 KB]
(335)
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